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EM6K6
Transistor
1.8V Drive Nch+Nch MOSFET
EM6K6
Structure
Silicon N-channel
MOSFET
Applications
Switching
Features
1) The MOSFET elements are independent,
eliminating mutual interference.
2) Mounting cost and area can be cut in half.
3) Low on-resistance.
4) Low voltage drive (1.8V) makes this device ideal for
portable equipment.
Packaging specifications
Dimensions (Unit : mm)
EMT6
Each lead has same dimensions
Abbreviated symbol : K06
Equivalent circuit
Type
Package
Code
Taping
T2R
(6)
(5)
Gate
Protection
Diode
?
(4)
Basic ordering unit
(pieces)
8000
Tr1
EM6K6
Tr2
(1)Tr1
(2)Tr1
Source
Gate
(2)
(3)
(1)
Absolute maximum ratings (Ta=25 ° C)
<It is the same ratings for the Tr1 and Tr2>
?
Gate
Protection
Diode
? A protection diode has been built in between the gate and
(3)Tr2
(4)Tr2
(5)Tr2
(6)Tr1
Drain
Source
Gate
Drain
Parameter
Drain ? source voltage
Gate ? source voltage
Symbol
V DSS
V GSS
Limits
20
± 8
Unit
V
V
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Drain current
Continuous
Pulsed
I D
I DP ? 1
± 300
± 600
mA
mA
Total power dissipation
P D
? 2
150
120
mW / TOTAL
mW / ELEMENT
Channel temperature
Storage temperature
Tch
Tstg
150
? 55 to + 150
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Each terminal mounted on a recommended land.
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ?
Limits
833
1042
Unit
° C/W / TOTAL
° C/W / ELEMENT
? Each terminal mounted on a recommended land
1/3
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